Nonvolatile Magneto-Electric Random Access Memory Circuit with Burst Writing and Back-to-Back Reads

by Pedram Khalili Amiri, Richard Dorrance, Dejan Markovi&cacute;, Kang L. Wang

Abstract:

Voltage controlled magneto-electric tunnel junctions (MEJ) and associated memory devices are described which provide efficient high speed switching of non-volatile magnetic random access memory (MeRAM) devices at high cell densities with multiple word access mechanisms, including a burst mode write of multiple words, and a back-to-back read of two words in consecutive clock cycles. In at least one preferred embodiment, these accesses are performed in a manner that prevents any possibility of a read disturbance arising.

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Reference:

P. K. Amiri, R. Dorrance, D. Markovi&cacute;, K. L. Wang, "Nonvolatile Magneto-Electric Random Access Memory Circuit with Burst Writing and Back-to-Back Reads," US Patent, US 8,988,923, March 2015.

Bibtex Entry:

@PATENT{Dorrance2015:US8988923,
    author    = {Amiri, Pedram Khalili and Dorrance, Richard and Markovi'{c}, Dejan and Wang, Kang L.},
    title     = {{Nonvolatile Magneto-Electric Random Access Memory Circuit with Burst Writing and Back-to-Back Reads}},
    year      = {2015},
    month     = {March},
    day       = {24},
    number    = {US 8,988,923},
    type      = {Patent},
    location  = {US},
    gpatentid = {US8988923},
    abstract  = {Voltage controlled magneto-electric tunnel junctions (MEJ) and associated memory devices are described which provide efficient high speed switching of non-volatile magnetic random access memory (MeRAM) devices at high cell densities with multiple word access mechanisms, including a burst mode write of multiple words, and a back-to-back read of two words in consecutive clock cycles. In at least one preferred embodiment, these accesses are performed in a manner that prevents any possibility of a read disturbance arising.},
    url       = {https://rdorrance.com/pdf/Dorrance2015US8988923B2.pdf}
}